Trần Xuân Phước's Publications

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SCI journal papers (2) More...

1 Tran Xuan Phuoc: Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances. JOURNAL OF ELECTRONIC MATERIALS 8 (July 2018). [Pub ID : #3336]
2 Tran Xuan Phuoc: Variations of Contact Resistance in Dual-Gated Monolayer Molybdenum Disulfide Transistors Depending on Gate Bias Selection. JOURNAL OF ELECTRONIC MATERIALS 46(6): 3390-3395 (June 2017). [Pub ID : #2854]

International conference papers (9) More...

1 Tran Xuan Phuoc: MODELING OF NEGATIVE DIFFERENTIAL RESISTANCE IN GRAPHENE FIELD-EFFECT TRANSISTOR. In proceedings of 6th International Workshop on Nanotechnology and Applications. ISBN 978-4-88552-300-7. (November 2017). [Pub ID : #3408]
2 Tran Xuan Phuoc: Variations of Contact Resistance in Monolayer Molybdenum Disulfide Transistors Depending on Gate-Bias Selection. In proceedings of The 3rd International Conference on Advanced Materials and Nanotechnology (ICAMN 2016). ISBN 978-604-95-0010-7. (October 2016). [Pub ID : #2736]
3 Tran Xuan Phuoc: A Model for Dual-Gated Monolayer MoS2 Transistor Characteristics Featuring Intrinsic and Gate-Dependent Contact Resistance.. In proceedings of LEC Conference on High Performance Devices 2016. IEEE (August 2016). [Pub ID : #2562]
4 Tran Xuan Phuoc: A Model for Satration Current in Molybdenum Disulfide Transistors.. In proceedings of 5th International Workshop on Nanotechnology and Applications. VNU- Laboratory for Nanotechnology (November 2015). [Pub ID : #2268]
5 Tran Xuan Phuoc: A Compact Model for Linear, Nonlinear and Saturation Current in Graphene Field-Effect Transistors for RF Applications. In proceedings of The 2015 International Conference on Integrated Circuits, Design and Verification. ISBN 978-4-88552-300-7. Ho Chi MInh City, Vietnam: (August 2015). [Pub ID : #1963]
6 Tran Xuan Phuoc: A Comprehensive Model for the Changing I-V Characteristics of Graphene Transistors.. In proceedings of The 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2014),. Yokohama, Japan: (September 2014). [Pub ID : #1962]
7 Tran Xuan Phuoc: A generalized model for characteristics of graphene FETs in various gate biasing configurations with mobility up to 24000 cm2/vs.. In proceedings of Lester Eastman Conference on High Performance Devices (LEC). IEEE (August 2014). [Pub ID : #1420]
8 Tran Xuan Phuoc: Full Transfer Characteristics of Nanoscale Graphene Field-Effect Transistors. In proceedings of The 13th Conference on Science and Technology. Ho Chi Minh City, Vietnam: (November 2013). [Pub ID : #1211]
9 Tran Xuan Phuoc: Current-Voltage Characteristics of Nanoscale Graphene Field-Effect Transistors. In proceedings of The 4th International Workshop on Nanotechnology and Application (IWNA). Vung Tau City, Vietnam: (November 2013). [Pub ID : #1210]